IRF9310PBF International Rectifier, IRF9310PBF Datasheet - Page 4

• Manufacturer Part Number: IRF9310PBF
• Description: MOSFET P-CH 30V 20A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9310PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.4V @ 100µA
• Gate Charge (qg) @ Vgs: 165nC @ 10V
• Input Capacitance (ciss) @ Vds: 5250pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 3.9mohm
• Rds(on) Test Voltage Vgs: -10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 6.8 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 20 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 58 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000.00
100.00
10.00
1.00
0.10
0.0001
0.001
20
15
10
Fig 9. Maximum Drain Current vs.
5
0
0.01
100
0.1
10
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
25
1
1E-006
Ambient Temperature
-V SD , Source-to-Drain Voltage (V)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
T J = 150°C
D = 0.50
T A , Ambient Temperature (°C)
50
0.20
0.02
0.10
0.05
0.01
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
75
T J = 25°C
0.0001
100
V GS = 0V
125
0.001
t 1 , Rectangular Pulse Duration (sec)
150
0.01
1000
Fig 10. Threshold Voltage vs. Temperature
0.1
100
0.1
2.5
2.0
1.5
1.0
10
Fig 8. Maximum Safe Operating Area
1
0.1
-75 -50 -25
T A = 25°C
Tj = 150°C
Single Pulse
-V DS , Drain-to-Source Voltage (V)
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
I D = -100µA
1
0
10
25
10msec
50
1msec
100
10
75 100 125 150
100µsec
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1000
100