IRF9310PBF International Rectifier, IRF9310PBF Datasheet - Page 4
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IRF9310PBF
Manufacturer Part Number
IRF9310PBF
Description
MOSFET P-CH 30V 20A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9310TRPBF.pdf
(8 pages)
Specifications of IRF9310PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.6 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.4V @ 100µA
Gate Charge (qg) @ Vgs
165nC @ 10V
Input Capacitance (ciss) @ Vds
5250pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
3.9mohm
Rds(on) Test Voltage Vgs
-10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
6.8 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 20 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
58 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9310PBF
Manufacturer:
IR
Quantity:
20 000
Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000.00
100.00
10.00
1.00
0.10
0.0001
0.001
20
15
10
Fig 9. Maximum Drain Current vs.
5
0
0.01
100
0.1
10
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
25
1
1E-006
Ambient Temperature
-V SD , Source-to-Drain Voltage (V)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
T J = 150°C
D = 0.50
T A , Ambient Temperature (°C)
50
0.20
0.02
0.10
0.05
0.01
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
75
T J = 25°C
0.0001
100
V GS = 0V
125
0.001
t 1 , Rectangular Pulse Duration (sec)
150
0.01
1000
Fig 10. Threshold Voltage vs. Temperature
0.1
100
0.1
2.5
2.0
1.5
1.0
10
Fig 8. Maximum Safe Operating Area
1
0.1
-75 -50 -25
T A = 25°C
Tj = 150°C
Single Pulse
-V DS , Drain-to-Source Voltage (V)
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
I D = -100µA
1
0
10
25
10msec
50
1msec
100
10
75 100 125 150
100µsec
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1000
100