IRF9310PBF International Rectifier, IRF9310PBF Datasheet - Page 5
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IRF9310PBF
Manufacturer Part Number
IRF9310PBF
Description
MOSFET P-CH 30V 20A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9310TRPBF.pdf
(8 pages)
Specifications of IRF9310PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.6 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.4V @ 100µA
Gate Charge (qg) @ Vgs
165nC @ 10V
Input Capacitance (ciss) @ Vds
5250pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
3.9mohm
Rds(on) Test Voltage Vgs
-10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
6.8 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 20 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
58 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9310PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 14. Maximum Avalanche Energy vs. Drain Current
2700
2400
2100
1800
1500
1200
900
600
300
+
Fig 12. On-Resistance vs. Gate Voltage
-
12
10
0
8
6
4
2
25
2
D.U.T
Starting T J , Junction Temperature (°C)
Fig 17.
4
-V GS, Gate -to -Source Voltage (V)
*
50
6
+
-
SD
8
75
T J = 25°C
10
T J = 125°C
12
100
TOP
BOTTOM -16A
-
G
14
I D = -20A
125
16
+
I D
-1.8A
-2.7A
18
150
+
-
20
Re-Applied
Voltage
Reverse
Recovery
Current
for P-Channel HEXFET
Fig 13. Typical On-Resistance vs. Drain Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
1000
800
600
400
200
P.W.
SD
14
12
10
DS
8
6
4
2
0
Waveform
1E-5
Waveform
Fig 16. Typical Power vs. Time
0
Ripple
Body Diode
Period
Body Diode Forward
20
1E-4
Diode Recovery
5%
Current
40
-I D , Drain Current (A)
dv/dt
Forward Drop
V GS = -4.5V
di/dt
60
1E-3
®
Time (sec)
Power MOSFETs
80
D =
V GS = -10V
1E-2
Period
P.W.
100 120 140 160
1E-1
V
V
I
SD
GS
DD
=10V
1E+0
5