IRF9310PBF International Rectifier, IRF9310PBF Datasheet - Page 5

• Manufacturer Part Number: IRF9310PBF
• Description: MOSFET P-CH 30V 20A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9310PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.4V @ 100µA
• Gate Charge (qg) @ Vgs: 165nC @ 10V
• Input Capacitance (ciss) @ Vds: 5250pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 3.9mohm
• Rds(on) Test Voltage Vgs: -10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 6.8 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 20 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 58 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 14. Maximum Avalanche Energy vs. Drain Current

2700
2400
2100
1800
1500
1200
900
600
300
‚
+
Fig 12. On-Resistance vs. Gate Voltage
-
12
10
0
8
6
4
2
25
2
D.U.T
Starting T J , Junction Temperature (°C)
Fig 17.
4
-V GS, Gate -to -Source Voltage (V)
*
50
6
ƒ
+
-
SD
8
75
T J = 25°C
10
T J = 125°C
12
100
TOP
BOTTOM -16A
-
G
„
14
I D = -20A
125
16
+
I D
-1.8A
-2.7A
18
150
+
-
20
Re-Applied
Voltage
Reverse
Recovery
Current
for P-Channel HEXFET
Fig 13. Typical On-Resistance vs. Drain Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
1000
800
600
400
200
P.W.
SD
14
12
10
DS
8
6
4
2
0
Waveform
1E-5
Waveform
Fig 16. Typical Power vs. Time
0
Ripple
Body Diode
Period
Body Diode Forward
20
1E-4
Diode Recovery
5%
Current
40
-I D , Drain Current (A)
dv/dt
Forward Drop
V GS = -4.5V
di/dt
60
1E-3
®
Time (sec)
Power MOSFETs
80
D =
V GS = -10V
1E-2
Period
P.W.
100 120 140 160
1E-1
V
V
I
SD
GS
DD
=10V
1E+0
5