IRF9310PBF International Rectifier, IRF9310PBF Datasheet - Page 6
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IRF9310PBF
Manufacturer Part Number
IRF9310PBF
Description
MOSFET P-CH 30V 20A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9310TRPBF.pdf
(8 pages)
Specifications of IRF9310PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.6 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.4V @ 100µA
Gate Charge (qg) @ Vgs
165nC @ 10V
Input Capacitance (ciss) @ Vds
5250pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
3.9mohm
Rds(on) Test Voltage Vgs
-10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
6.8 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 20 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
58 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9310PBF
Manufacturer:
IR
Quantity:
20 000
Fig 19a. Unclamped Inductive Test Circuit
6
Fig 18a. Gate Charge Test Circuit
0
R
-V
-20V
G
V DS
GS
Fig 20a. Switching Time Test Circuit
t p
I AS
20K
1K
D.U.T
0.01
L
S
S
DRIVER
DUT
L
15V
+
V DD
-
A
VCC
Fig 18b. Gate Charge Waveform
Id
V
10%
90%
V
Fig 19b. Unclamped Inductive Waveforms
GS
DS
Vgs
Fig 20b. Switching Time Waveforms
I
AS
t
d(on)
Qgodr
t
r
t p
Qgd
V
t
Qgs2
(BR)DSS
d(off)
www.irf.com
Vgs(th)
Vds
Qgs1
t
f