IXTP76N075T IXYS, IXTP76N075T Datasheet

MOSFET N-CH 75V 76A TO-220

IXTP76N075T

Manufacturer Part Number
IXTP76N075T
Description
MOSFET N-CH 75V 76A TO-220
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTP76N075T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
76A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
57nC @ 10V
Input Capacitance (ciss) @ Vds
2580pF @ 25V
Power - Max
176W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.012 Ohms
Forward Transconductance Gfs (max / Min)
55 s
Drain-source Breakdown Voltage
75 V
Continuous Drain Current
76 A
Power Dissipation
176 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
76
Rds(on), Max, Tj=25°c, (?)
0.0120
Ciss, Typ, (pf)
2580
Qg, Typ, (nc)
57
Trr, Typ, (ns)
80
Trr, Max, (ns)
-
Pd, (w)
176
Rthjc, Max, (k/w)
0.85
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP76N075T
Manufacturer:
IXYS
Quantity:
4 250
Part Number:
IXTP76N075T
Manufacturer:
SANYO
Quantity:
6 000
Part Number:
IXTP76N075T
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
D25
LRMS
DM
AR
GSS
DSS
L
AS
J
JM
stg
SOLD
DSS
DGR
GSM
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
C
GS
GS
J
J
J
DS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 175°C, R
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
GS
, di/dt ≤ 100 A/μs, V
TM
DSS
, I
D
D
= 250 μA
= 50 μA
D
= 25 A, Notes 1, 2
G
DS
= 10 Ω
= 0 V
GS
Preliminary Technical Information
= 1 MΩ
DD
T
≤ V
J
= 150°C
DSS
IXTA76N075T
IXTP76N075T
JM
Min.
2.0
75
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10 Nm/lb.in.
Typ.
9.7
± 20
210
500
176
175
300
260
2.5
75
75
76
75
10
3
± 100
3
250
Max.
4.0
12
1
V/ns
mJ
μA
°C
°C
°C
nA
°C
°C
μA
W
V
A
A
A
V
V
A
g
g
V
V
Features
Advantages
Applications
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
Primary Switch for 24V and 48V
TO-263 (IXTA)
DC/DC Converters and Off-line UPS
V
I
R
High Current Switching
D25
TO-220 (IXTP)
Systems
Applications
G = Gate
S = Source
DSS
DS(on)
G
G
D
S
=
=
S
≤ ≤ ≤ ≤ ≤
D = Drain
TAB = Drain
75
76
12 mΩ Ω Ω Ω Ω
(TAB)
DS99632 (11/06)
(TAB)
A
V

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IXTP76N075T Summary of contents

Page 1

... GS(th ± GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTA76N075T IXTP76N075T Maximum Ratings MΩ ± 210 JM 10 500 ≤ DSS 176 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 3 2.5 Characteristic Values Min. Typ. 75 2.0 ± ...

Page 2

... Typ. Max. 240 JM 1.1 80 Kelvin test contact DS(on) The Technical Specifications 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA76N075T IXTP76N075T TO-263 (IXTA) Outline Pins Gate 2 - Drain Source 4, TAB - Drain nC Dim. Millimeter Inches nC Min. Max. Min. A 4.06 4 ...

Page 3

... Value 175º 25º 175 200 225 250 275 -50 IXTA76N075T IXTP76N075T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized 38A Value DS(on) D vs. Junction Temperature V = 10V 76A 38A D -25 ...

Page 4

... T = -40ºC J 25ºC 60 150º 6 1.2 1.4 1.6 0 1.00 0.10 0. 0.00001 IXTA76N075T IXTP76N075T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 I - Amperes D Fig. 10. Gate Charge V = 38V 10A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 ...

Page 5

... Switching Times vs. Junction Temperature 10A 100 - - - - t d(off 10V IXTA76N075T IXTP76N075T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current T = 25º Ω 10V 37V 125º Amperes D Fig. 16. Resistive Turn-off I = 10A 30A d(off Ω 10V 37V 105 T - Degrees Centigrade J Fig ...

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