IXTP76N075T IXYS, IXTP76N075T Datasheet - Page 5

• Manufacturer Part Number: IXTP76N075T
• Description: MOSFET N-CH 75V 76A TO-220
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTP76N075T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 76A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 2580pF @ 25V
• Power - Max: 176W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohms
• Forward Transconductance Gfs (max / Min): 55 s
• Drain-source Breakdown Voltage: 75 V
• Continuous Drain Current: 76 A
• Power Dissipation: 176 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 76
• Rds(on), Max, Tj=25°c, (?): 0.0120
• Ciss, Typ, (pf): 2580
• Qg, Typ, (nc): 57
• Trr, Typ, (ns): 80
• Trr, Max, (ns): -
• Pd, (w): 176
• Rthjc, Max, (k/w): 0.85
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
90
80
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20
10
36
35
34
33
32
31
30
29
50
47
44
41
38
35
32
29
26
23
20
17
10
10
25
t
T
V
12
r
J
DS
12
Switching Times vs. Gate Resistance
Switching Times vs. Drain Current
= 125ºC, V
35
= 37V
Rise Time vs. Junction Temperature
14
I
14
D
Fig. 17. Resistive Turn-off
= 10A
Fig. 15. Resistive Turn-on
45
t
16
d(on)
Fig. 13. Resistive Turn-on
T
T
16
GS
J
J
18
- - - -
= 125ºC
= 25ºC
I
55
T
= 10V
D
R
J
18
- Amperes
- Degrees Centigrade
G
20
I
D
- Ohms
65
= 30A
20
22
I
D
t
R
V
75
= 30A
f
24
G
DS
22
= 10 Ω , V
= 37V
26
85
24
t
28
d(off)
GS
26
95
- - - -
= 10V
30
I
D
R
V
V
28
= 10A
G
GS
DS
105
32
= 10 Ω
= 37V
= 10V
30
34
115
65
60
55
50
45
40
35
30
34
32
30
28
26
24
22
20
18
125
100
90
80
70
60
50
40
30
35
34
33
32
31
30
29
50
47
44
41
38
35
32
29
26
23
20
17
10
25
10
Switching Times vs. Junction Temperature
12
Switching Times vs. Gate Resistance
t
T
V
35
f
J
DS
R
V
V
12
= 125ºC, V
G
GS
DS
= 37V
14
= 10 Ω
= 37V
= 10V
45
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
I
14
T
16
D
Rise Time vs. Drain Current
J
t
= 10A
d(off)
Fig. 14. Resistive Turn-on
- Degrees Centigrade
55
GS
18
16
- - - -
R
= 10V
G
65
20
I
- Ohms
D
18
- Amperes
22
75
I
D
24
20
= 10A
I
85
t
R
V
D
T
f
G
DS
T
= 30A
J
26
J
= 10 Ω , V
= 25ºC
IXYS REF: T_76N075T (2V) 7-06-06.xls
I
= 125ºC
= 37V
22
D
IXTP76N075T
IXTA76N075T
95
= 30A
28
t
d(off)
105
24
GS
30
- - - -
= 10V
115
32
26
34
125
28
170
150
130
110
90
70
50
30
60
55
50
45
40
35
30
30