IXTP76N075T IXYS, IXTP76N075T Datasheet - Page 4

MOSFET N-CH 75V 76A TO-220

IXTP76N075T

Manufacturer Part Number
IXTP76N075T
Description
MOSFET N-CH 75V 76A TO-220
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTP76N075T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
76A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
57nC @ 10V
Input Capacitance (ciss) @ Vds
2580pF @ 25V
Power - Max
176W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.012 Ohms
Forward Transconductance Gfs (max / Min)
55 s
Drain-source Breakdown Voltage
75 V
Continuous Drain Current
76 A
Power Dissipation
176 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
76
Rds(on), Max, Tj=25°c, (?)
0.0120
Ciss, Typ, (pf)
2580
Qg, Typ, (nc)
57
Trr, Typ, (ns)
80
Trr, Max, (ns)
-
Pd, (w)
176
Rthjc, Max, (k/w)
0.85
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP76N075T
Manufacturer:
IXYS
Quantity:
4 250
Part Number:
IXTP76N075T
Manufacturer:
SANYO
Quantity:
6 000
Part Number:
IXTP76N075T
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
140
120
100
220
200
180
160
140
120
100
100
80
60
40
20
80
60
40
20
10
0
0
0.4
3
0
f = 1 MHz
3.5
5
Fig. 9. Forward Voltage Drop of
0.6
T
J
4
= 150ºC
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
4.5
0.8
Intrinsic Diode
15
V
V
V
GS
SD
DS
5
T
- Volts
- Volts
J
- Volts
= 25ºC
20
1
5.5
C iss
C oss
C rss
T
J
25
= -40ºC
150ºC
1.2
25ºC
6
30
6.5
1.4
35
7
1.6
7.5
40
1.00
0.10
0.01
80
70
60
50
40
30
20
10
10
0.00001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
5
D
G
DS
= 10A
= 10mA
0.0001
20
Fig. 12. Maximum Transient Thermal
= 38V
10
Fig. 8. Transconductance
15
T
J
40
= - 40ºC
Q
0.001
Pulse Width - Seconds
Fig. 10. Gate Charge
G
20
- NanoCoulombs
I
25ºC
D
150ºC
- Amperes
Impedance
25
60
0.01
30
80
35
IXTP76N075T
IXTA76N075T
0.1
40
100
45
1
50
120
55
10
140
60

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