IRF6645TRPBF International Rectifier, IRF6645TRPBF Datasheet

MOSFET N-CH 100V 5.7A DIRECTFET

IRF6645TRPBF

Manufacturer Part Number
IRF6645TRPBF
Description
MOSFET N-CH 100V 5.7A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6645TRPBF.pdf (10 pages)

Specifications of IRF6645TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 5.7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
4.9V @ 50µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
890pF @ 25V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric SJ
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5.7 A
Power Dissipation
42 W
Gate Charge Qg
14 nC
For Use With
IRAUDAMP5 - BOARD DEMO IRS2092S/IRF6645IRAUDAMP4 - KIT 2CH 120W HALF BRDG AUDIO AMP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6645TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
IRF6645TRPBF
Manufacturer:
IR
Quantity:
8 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF6645TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF6645TRPBF
Quantity:
9 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF6645TRPBF
Quantity:
1 000
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
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Description
The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6645PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance isolated DC-DC converters.
www.irf.com
V
V
I
I
I
I
E
I
Absolute Maximum Ratings
D
D
D
DM
AR
DS
GS
AS
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for High Performance Isolated Converter
Optimized for Synchronous Rectification
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible 
Compatible with existing Surface Mount Techniques 
RoHS Compliant 
Low Conduction Losses
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
Primary Switch Socket
SH
A
A
C
= 25°C
= 70°C
= 25°C
80
70
60
50
40
30
20
4
Fig 1. Typical On-Resistance vs. Gate Voltage
SJ
V GS , Gate-to-Source Voltage (V)
6
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
8
SP
10
12
Ãg
T J = 25°C
T J = 125°C
I D = 3.4A
g
Parameter
14
GS
GS
GS
MZ
@ 10V
@ 10V
@ 10V
16
h
f
MN
„
…
†
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
C
measured with thermocouple mounted to top (Drain) of part.
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
12
10

8
6
4
2
0
J
= 25°C, L = 5.0mH, R
0
I D = 3.4A
100V max ±20V max
DirectFET™ Power MOSFET ‚
Q
V
14nC
SJ
Q G Total Gate Charge (nC)
g tot
DSS
4
Max.
100
V DS = 80V
VDS= 50V
±20
5.7
4.5
3.4
25
45
29
IRF6645TRPbF
G
4.8nC
= 25Ω, I
8
V
Q
GS
IRF6645PbF
gd
TM
DirectFET™ ISOMETRIC
packaging to achieve the
AS
12
= 3.4A.
28mΩ@ 10V
R
V
4.0V
DS(on)
gs(th)
Units
16
mJ
V
A
A
8/18/06
1

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IRF6645TRPBF Summary of contents

Page 1

... Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage „ T measured with thermocouple mounted to top (Drain) of part. C … Repetitive rating; pulse width limited by max. junction temperature. † Starting T = 25° 5.0mH IRF6645PbF IRF6645TRPbF DirectFET™ Power MOSFET ‚ DSS GS DS(on) 28mΩ@ 10V 100V max ±20V max Q Q ...

Page 2

IRF6645PbF Electrical Characteristic @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P Operating Junction and Storage Temperature ...

Page 4

IRF6645PbF 100 10 6.0V 1 ≤60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 10V ≤60µs PULSE WIDTH 150° ...

Page 5

150° 25° -40°C 10.0 1.0 0.1 0.3 0.4 0.5 0.6 0 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 6.0 5.0 4.0 3.0 2.0 1.0 ...

Page 6

IRF6645PbF DUT Fig 15a. Gate Charge Test Circuit D.U 20V GS 0.01 Ω Fig 16b. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time ...

Page 7

D.U.T + ƒ • • - • + ‚ „  • G • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, SJ Outline (Small Size Can, J-Designation). Please see DirectFET application note AN-1035 for all ...

Page 8

IRF6645PbF DirectFET™ Outline Dimension, SJ Outline (Small Size Can, J-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS IMPERIAL METRIC ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6645TRPBF). For 1000 parts on 7" reel, order IRF6645TR1PBF CODE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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