IRF6645TRPBF International Rectifier, IRF6645TRPBF Datasheet - Page 10

• Manufacturer Part Number: IRF6645TRPBF
• Description: MOSFET N-CH 100V 5.7A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6645TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 4.9V @ 50µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 890pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SJ
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 42 W
• Gate Charge Qg: 14 nC
• For Use With: IRAUDAMP5 - BOARD DEMO IRS2092S/IRF6645IRAUDAMP4 - KIT 2CH 120W HALF BRDG AUDIO AMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6645TRPBFTR

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/