IRF6645TRPBF International Rectifier, IRF6645TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF6645TRPBF
• Description: MOSFET N-CH 100V 5.7A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6645TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 4.9V @ 50µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 890pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SJ
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 42 W
• Gate Charge Qg: 14 nC
• For Use With: IRAUDAMP5 - BOARD DEMO IRS2092S/IRF6645IRAUDAMP4 - KIT 2CH 120W HALF BRDG AUDIO AMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6645TRPBFTR

IRF6645PbF
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
S
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t p
DRIVER
L
V DS
D.U.T
R G
+
V DD
-
I AS
A
20V
GS
0.01 Ω
I
t p
AS
Fig 16c. Unclamped Inductive Waveforms
Fig 16b. Unclamped Inductive Test Circuit
V
DS
90%
+
10%
-
V
GS
t
t
t
t
d(on)
d(off)
r
≤ 1
f
≤ 0.1 %
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
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