IRF6645TRPBF International Rectifier, IRF6645TRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF6645TRPBF
• Description: MOSFET N-CH 100V 5.7A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6645TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 4.9V @ 50µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 890pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SJ
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 42 W
• Gate Charge Qg: 14 nC
• For Use With: IRAUDAMP5 - BOARD DEMO IRS2092S/IRF6645IRAUDAMP4 - KIT 2CH 120W HALF BRDG AUDIO AMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6645TRPBFTR

DirectFET™ Outline Dimension, SJ Outline
(Small Size Can, J-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
IRF6645PbF
DirectFET™ Part Marking
8
CODE
A
B
C
D
E
F
G
H
K
L
M
R
P
4.75
3.70
2.75
0.35
0.58
0.58
0.68
0.68
0.98
2.28
0.616
0.020
0.08
MIN
METRIC
DIMENSIONS
1.02
4.85
3.95
2.85
0.45
0.62
0.62
0.72
0.72
2.32
0.676
0.080
0.17
MAX
0.187
0.146
0.108
0.014
0.023
0.023
0.027
0.027
0.039
0.090
0.0235
0.0008
0.003
MIN
IMPERIAL
0.191
0.156
0.112
0.018
0.024
0.024
0.028
0.028
0.040
0.091
0.0274
0.0031
0.007
MAX
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