STB9NK60ZT4 STMicroelectronics, STB9NK60ZT4 Datasheet

STB9NK60ZT4

Manufacturer Part Number

STB9NK60ZT4

Description

MOSFET N-CH 600V 7A D2PAK

Manufacturer

STMicroelectronics

Series

SuperMESH™r

Datasheet

1.STB9NK60ZT4.pdf (13 pages)

Specifications of STB9NK60ZT4

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

950 mOhm @ 3.5A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

4.5V @ 100µA

Gate Charge (qg) @ Vgs

53nC @ 10V

Input Capacitance (ciss) @ Vds

1110pF @ 25V

Power - Max

125W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Transistor Polarity

N Channel

Continuous Drain Current Id

3.5A

Drain Source Voltage Vds

600V

On Resistance Rds(on)

850mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

3.75V

Rohs Compliant

Yes

Configuration

Single

Resistance Drain-source Rds (on)

0.95 Ohms

Forward Transconductance Gfs (max / Min)

5.3 S

Drain-source Breakdown Voltage

600 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

7 A

Power Dissipation

125 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

STB9NK60ZT4

Manufacturer:

Quantity:

25 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

STB9NK60ZT4

Manufacturer:

Quantity:

12 500

Company:

BOSTOCK HK LIMITED

Part Number:

STB9NK60ZT4

Manufacturer:

Company:

Meier Automation Equipment Co., Limited

Part Number:

STB9NK60ZT4

Manufacturer:

Quantity:

20 000

Current page: 1 of 13
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DESCRIPTION

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established strip-

based PowerMESH™ layout. In addition to pushing

on-resistance significantly down, special care is tak-

en to ensure a very good dv/dt capability for the

most demanding applications. Such series comple-

ments ST full range of high voltage MOSFETs in-

cluding revolutionary MDmesh™ products.

APPLICATIONS

ORDERING INFORMATION

June 2002

STP9NK60Z

STP9NK60ZFP

STB9NK60Z

STB9NK60Z-1

TYPICAL R

EXTREMELY HIGH dv/dt CAPABILITY

IMPROVED ESD CAPABILITY

100% AVALANCHE RATED

GATE CHARGE MINIMIZED

VERY LOW INTRINSIC CAPACITANCES

VERY GOOD MANUFACTURING

REPEATIBILITY

HIGH CURRENT, HIGH SPEED SWITCHING

IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

STP9NK60ZFP

STB9NK60ZT4

STB9NK60Z-1

TYPE

SALES TYPE

STP9NK60Z

STB9NK60Z

N-CHANNEL 600V - 0.85

(on) = 0.85

600 V

DSS

Zener-Protected SuperMESH™Power MOSFET

< 0.95

DS(on)

P9NK60ZFP

B9NK60Z-1

MARKING

P9NK60Z

B9NK60Z

7 A

STP9NK60Z - STP9NK60ZFP

125 W

STB9NK60Z - STB9NK60Z-1

30 W

- 7A TO-220/FP/D

PACKAGE

TO-220FP

TO-220

INTERNAL SCHEMATIC DIAGRAM

TO-220

PAK

1 2

TAPE & REEL

PACKAGING

PAK/I

TUBE

TO-220FP

PAK

1/13

Related parts for STB9NK60ZT4

STB9NK60ZT4 Summary of contents

Page 1

... ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE STP9NK60Z STP9NK60ZFP STB9NK60Z STB9NK60ZT4 STB9NK60Z-1 June 2002 STP9NK60Z - STP9NK60ZFP STB9NK60Z - STB9NK60Z TO-220/FP 125 W ...

Page 2

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous ...

Page 3

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( Gate Threshold Voltage GS(th) R Static ...

Page 4

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 Safe Operating Area For TO-220/D2PAK/I2PAK Thermal Impedance For TO-220/D2PAK/I2PAK Output Characteristics 4/13 Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Transfer Characteristics ...

Page 5

Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 5/13 ...

Page 6

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/13 Normalized BVDSS vs Temperature ...

Page 7

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 Fig. 2: Unclamped Inductive Waveform ...

Page 8

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 ...

Page 9

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9.8 L5 2.9 ...

Page 10

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 DIM. MIN. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 1.27 L3 1.4 M 2.4 R ...

Page 11

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 TO-262 (I mm DIM. MIN. TYP. A 4.4 A1 2.49 B 0.7 B2 1.14 C 0.45 C2 1.23 D 8. 13.1 L1 3. PAK) ...

Page 12

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 ...

Page 13

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...

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