STB9NK60ZT4 STMicroelectronics, STB9NK60ZT4 Datasheet - Page 2

• Manufacturer Part Number: STB9NK60ZT4
• Description: MOSFET N-CH 600V 7A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB9NK60ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 950 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 1110pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.95 Ohms
• Forward Transconductance Gfs (max / Min): 5.3 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
ABSOLUTE MAXIMUM RATINGS
(
(1) I
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
2/13
l
) Pulse width limited by safe operating area
V
Rthj-case
Rthj-amb
dv/dt (1)
Rthj-pcb
Symbol
Symbol
Symbol
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
DGR
I
I
TOT
AR
T
T
ISO
stg
GSO
DS
GS
AS
D
D
7A, di/dt 200
j
l
(
l
)
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
µ
A, V
Parameter
DD
j
= 25 °C, I
V
(BR)DSS
D
Parameter
C
GS
, T
= I
= 25°C
GS
j
j
= 20 k )
max)
AR
Parameter
T
= 0)
, V
JMAX.
DD
C
C
Igs=± 1mA (Open Drain)
= 25°C
= 100°C
= 50 V)
Test Conditions
TO-220
I
D
2
2
PAK
PAK / I
TO-220 /
125
4.4
28
7
1
-
2
1
PAK
Min.
30
-55 to 150
-55 to 150
Value
62.5
4000
300
± 30
D
600
600
4.5
2
Max Value
30
PAK
235
Typ.
7
TO-220FP
4.4 (*)
28 (*)
2500
0.24
7 (*)
30
220FP
4.16
TO-
Max.
°C/W
°C/W
°C/W
W/°C
Unit
Unit
Unit
V/ns
°C
mJ
°C
°C
A
W
V
V
V
V
A
A
A
V
V