STB9NK60ZT4 STMicroelectronics, STB9NK60ZT4 Datasheet - Page 3

• Manufacturer Part Number: STB9NK60ZT4
• Description: MOSFET N-CH 600V 7A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB9NK60ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 950 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 1110pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.95 Ohms
• Forward Transconductance Gfs (max / Min): 5.3 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
Symbol
Symbol
I
R
oss eq.
V
V
SDM
(BR)DSS
g
t
t
I
t
I
I
C
SD
DS(on)
C
r(Voff)
GS(th)
C
d(on)
Q
Q
fs
d(off)
RRM
GSS
I
2. Pulse width limited by safe operating area.
3. C
DSS
Q
Q
SD
t
t
oss
t
t
t
rss
iss
rr
gs
gd
c
r
f
f
(1)
rr
g
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
I
V
V
V
V
V
V
V
V
R
(Resistive Load see, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(Resistive Load see, Figure 3)
V
R
(Inductive Load see, Figure 5)
D
V
SD
SD
DS
DS
GS
DS
GS
DS
GS
DD
DD
GS
DD
G
DD
DD
G
G
DS
= 1 mA, V
= 4.7
= 4.7
= 4.7
= 7 A, V
= 7 A, di/dt = 100A/µs
= Max Rating
= Max Rating, T
= V
= 15 V
= ± 20V
= 10V, I
= 0V, V
= 300 V, I
= 480 V, I
= 10V
= 30V, T
= 300 V, I
= 300 V, I
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Test Conditions
GS
, I
,
V
V
GS
DS
I
V
D
GS
D
GS
GS
D
j
GS
= 3.5 A
D
D
= 150°C
D
D
= 100µA
= 3.5 A
= 0V to 480 V
= 0
= 0
= 10 V
= 10 V
= 3.5 A
= 7 A,
= 3.5 A
= 7 A,
= 10V
C
= 125 °C
GS
= 0
Min.
Min.
Min.
Min.
Min.
600
3
oss
when V
1110
Typ.
3.75
0.85
Typ.
Typ.
Typ.
Typ.
14.5
135
480
5.3
3.5
30
72
19
17
38
21
43
15
20
11
7
8
DS
increases from 0 to 80%
Max.
Max.
Max.
Max.
Max.
0.95
±10
4.5
1.6
50
53
28
1
7
Unit
Unit
Unit
Unit
Unit
µA
µA
µA
nC
nC
nC
µC
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
3/13