STSJ100NHS3LL STMicroelectronics, STSJ100NHS3LL Datasheet - Page 10
STSJ100NHS3LL
Manufacturer Part Number
STSJ100NHS3LL
Description
MOSFET N-CH 30V 20A PWRSOIC-8
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STSJ100NHS3LL.pdf
(12 pages)
Specifications of STSJ100NHS3LL
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.2 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
35nC @ 4.5V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
20 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Package mechanical data
10/12
DIM.
a1
a2
a3
b1
e3
e4
c1
M
C
D
A
b
E
e
F
L
S
0.65
0.35
0.19
0.25
MIN.
0.1
4.8
5.8
3.8
0.4
PowerSO-8™ MECHANICAL DATA
1.27
3.81
2.79
mm.
TYP
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
1.27
0.5
5.0
6.2
4.0
0.6
45° (typ.)
8° (max.)
0.003
0.025
0.013
0.007
0.010
0.188
0.228
0.015
0.14
MIN.
0.050
0.150
0.110
TYP.
inch
STSJ100NHS3LL
0.068
0.009
0.064
0.033
0.018
0.010
0.019
0.196
0.244
0.157
0.050
0.023
MAX.