STSJ100NHS3LL STMicroelectronics, STSJ100NHS3LL Datasheet - Page 10

• Manufacturer Part Number: STSJ100NHS3LL
• Description: MOSFET N-CH 30V 20A PWRSOIC-8
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STSJ100NHS3LL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 20 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Package mechanical data
10/12
DIM.
a1
a2
a3
b1
e3
e4
c1
M
C
D
A
b
E
e
F
L
S
0.65
0.35
0.19
0.25
MIN.
0.1
4.8
5.8
3.8
0.4
PowerSO-8™ MECHANICAL DATA
1.27
3.81
2.79
mm.
TYP
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
1.27
0.5
5.0
6.2
4.0
0.6
45° (typ.)
8° (max.)
0.003
0.025
0.013
0.007
0.010
0.188
0.228
0.015
0.14
MIN.
0.050
0.150
0.110
TYP.
inch
STSJ100NHS3LL
0.068
0.009
0.064
0.033
0.018
0.010
0.019
0.196
0.244
0.157
0.050
0.023
MAX.