STSJ100NHS3LL STMicroelectronics, STSJ100NHS3LL Datasheet - Page 4

• Manufacturer Part Number: STSJ100NHS3LL
• Description: MOSFET N-CH 30V 20A PWRSOIC-8
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STSJ100NHS3LL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 20 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
R
V
CASE
(BR)DSS
g
I
I
DS(on)
DS(on)
C
GS(th)
C
C
Q
GSS
Q
DSS
fs
Q
oss
iss
rss
gs
gd
g
(1)
=25°C unless otherwise specified)
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
V
(see Figure 13)
D
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DD
= 1mA, V
= V
= 10V, I
= 4.5V, I
= 10V, I
= 4.5V, I
= 15V, I
= 24V
= ±16V
=10V, I
=25V, f=1MHz, V
= 4.5V,
Test conditions
Test conditions
GS
, I
D
D
D
D
GS
D
D
D
= 10A
= 10A @125°C
= 15A
= 20A
= 1mA
= 10A
= 10A @125°C
= 0
GS
=0
Min.
Min.
30
1
0.0032
0.004
0.005
0.006
Typ.
4200
Typ.
46.2
700
8.5
7.2
44
27
STSJ100NHS3LL
0.0042
0.0057
Max.
±
Max.
500
2.5
100
35
Unit
Unit
µA
nA
nC
nC
nC
pF
pF
pF
V
V
Ω
Ω
Ω
Ω
S