STSJ100NHS3LL STMicroelectronics, STSJ100NHS3LL Datasheet - Page 7

• Manufacturer Part Number: STSJ100NHS3LL
• Description: MOSFET N-CH 30V 20A PWRSOIC-8
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STSJ100NHS3LL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 20 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STSJ100NHS3LL
Figure 7.
Figure 9.
Figure 11. Source-drain diode forward
Gate charge vs gate-source voltage Figure 8.
Normalized gate threshold voltage
vs temperature
characteristics
Figure 10. Normalized on resistance vs
Capacitance variations
temperature
Electrical characteristics
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