STB200NF04-1 STMicroelectronics, STB200NF04-1 Datasheet - Page 3

• Manufacturer Part Number: STB200NF04-1
• Description: MOSFET N-CH 40V 120A I2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB200NF04-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 5100pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-3512-5

ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Table 7: Switching On/Off
Table 8: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
V
SDM
g
t
t
I
C
SD
C
C
d(on)
d(off)
Q
Q
fs
RRM
I
Q
Q
SD
t
t
oss
t
iss
rss
rr
gs
gd
r
f
(1)
rr
g
(1)
(2)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
V
R
(see Figure 20)
V
V
(see Figure 23)
I
I
V
(see Figure 21)
V
SD
SD
DS
DD
DD
GS
DD
G
DS
= 4.7
= 120 A, V
= 120 A, di/dt = 100A/µs
= 15 V
= 20 V, I
= 20V, I
= 10V
= 30V, T
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
STP200NF04 - STB200NF04 - STB200NF04-1
,
V
I
D
GS
D
D
j
= 120 A,
GS
= 150°C
= 90 A
= 90 A
= 10 V
= 0
GS
= 0
Min.
Min.
Min.
5100
1600
Typ.
Typ.
Typ.
150
600
320
140
120
170
190
4.5
30
30
62
85
Max.
Max.
Max.
210
120
480
1.3
Unit
Unit
Unit
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
3/15