STB200NF04-1 STMicroelectronics, STB200NF04-1 Datasheet - Page 5
![MOSFET N-CH 40V 120A I2PAK](/photos/1/39/13917/497-i2_pak__to-262_sml.jpg)
STB200NF04-1
Manufacturer Part Number
STB200NF04-1
Description
MOSFET N-CH 40V 120A I2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STP200NF04.pdf
(15 pages)
Specifications of STB200NF04-1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.7 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
210nC @ 10V
Input Capacitance (ciss) @ Vds
5100pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-3512-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB200NF04-1
Manufacturer:
ST
Quantity:
12 500
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 11: Dource-Drain Diode Forward Char-
acteristics
STP200NF04 - STB200NF04 - STB200NF04-1
Figure 12: Capacitance Variations
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 14: Normalized Breakdown Voltage vs
Temperature
5/15