IXTQ86N20T IXYS, IXTQ86N20T Datasheet - Page 2

• Manufacturer Part Number: IXTQ86N20T
• Description: MOSFET N-CH 200V 86A TO-3P
• Manufacturer: IXYS

Specifications of IXTQ86N20T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 29 mohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 86A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 480W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 86
• Rds(on), Max, Tj=25°c, (?): 0.029
• Ciss, Typ, (pf): 4500
• Qg, Typ, (nc): 90
• Trr, Typ, (ns): 140
• Trr, Max, (ns): -
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
Note 1:
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
SM
d(on)
d(off)
f
S
r
rr
fs
oss
g(on)
gd
thJC
thCS
SD
iss
rss
gs
*: Current may be limited by externalterminal currnet limit.
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;
4,835,592
4,850,072
4,881,106
Test Conditions
Test Conditions
V
V
V
R
V
V
Repetitive
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
TO-220
TO-3P
=25A, -di/dt = 100 A/μs
= I
= 100V, V
= 10 V; I
= 3.3 Ω (External)
= 10 V, V
= 15 V, V
= 0 V
= 0 V, V
S
, V
4,931,844
5,017,508
5,034,796
GS
= 0 V, Note 1
D
DS
DS
GS
DS
= 0.5 I
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
5,049,961
5,063,307
5,187,117
D25
, Note 1
DSS
DSS
, I
, I
5,237,481
5,381,025
5,486,715
D
D
= 43 A
= 25 A
(T
T
J
J
= 25°C unless otherwise specified)
6,162,665
6,259,123 B1
6,306,728 B1
= 25°C unless otherwise specified)
Min.
Min.
46
Characteristic Values
Characteristic Values
IXTA 86N20T
6,404,065 B1
6,534,343
6,583,505
4500
Typ.
0.50
0.25
Typ.
550
140
78
73
22
24
52
29
90
30
23
6,683,344
6,710,405 B2
6,710,463
Max.
Max.
0.31 °C/W
260
1.5
86
°C /W
°C/W
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
S
V
A
A
6,727,585
6,759,692
6,771,478 B2
IXTQ 86N20T
IXTP 86N20T
7,005,734 B2
7,063,975 B2
7,071,537