IXTQ86N20T IXYS, IXTQ86N20T Datasheet - Page 4

• Manufacturer Part Number: IXTQ86N20T
• Description: MOSFET N-CH 200V 86A TO-3P
• Manufacturer: IXYS

Specifications of IXTQ86N20T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 29 mohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 86A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 480W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 86
• Rds(on), Max, Tj=25°c, (?): 0.029
• Ciss, Typ, (pf): 4500
• Qg, Typ, (nc): 90
• Trr, Typ, (ns): 140
• Trr, Max, (ns): -
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
160
140
120
100
240
210
180
150
120
100
80
60
40
20
90
60
30
10
0
0
3.5
0.4
0
f = 1 MHz
0.5
5
4
Fig. 9. Forward Voltage Drop of
0.6
10
Fig. 7. Input Admittance
4.5
Fig. 11. Capacitance
T
J
0.7
Intrinsic Diode
= 125ºC
T
15
J
V
V
V
= -40ºC
GS
SD
DS
125ºC
5
25ºC
0.8
- Volts
- Volts
- Volts
20
C iss
C oss
C rss
0.9
5.5
T
25
J
= 25ºC
1
6
30
1.1
6.5
35
1.2
40
1.3
7
120
110
100
1.00
0.10
0.01
90
80
70
60
50
40
30
20
10
10
0
9
8
7
6
5
4
3
2
1
0
0.0001
0
0
V
I
I
D
G
20
DS
10
= 25A
= 10mA
IXTA 86N20T
= 100V
Fig. 12. Maximum Transient Thermal
0.001
40
20
Fig. 8. Transconductance
60
Q
Fig. 10. Gate Charge
Pulse W idth - Seconds
30
G
I
- NanoCoulombs
D
0.01
80
- Amperes
Resistance
40
T
J
100
= - 40ºC
125ºC
25ºC
50
120
0.1
IXTQ 86N20T
IXTP 86N20T
60
140
70
160
1
180
80
200
10
90