IXTQ86N20T IXYS, IXTQ86N20T Datasheet - Page 3

• Manufacturer Part Number: IXTQ86N20T
• Description: MOSFET N-CH 200V 86A TO-3P
• Manufacturer: IXYS

Specifications of IXTQ86N20T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 29 mohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 86A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 480W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 86
• Rds(on), Max, Tj=25°c, (?): 0.029
• Ciss, Typ, (pf): 4500
• Qg, Typ, (nc): 90
• Trr, Typ, (ns): 140
• Trr, Max, (ns): -
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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3.6
3.4
3.2
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
3
2
1
0
0
0
0
Fig. 5. R
0.2 0.4 0.6 0.8
0.5
20
V
GS
1
= 10V
40
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
1.5
60
v s. Drain Current
2
Normalized to I
80
I
D
V
1
V
2.5
- Amperes
DS
DS
@ 125ºC
@ 25ºC
100
1.2 1.4 1.6 1.8
- Volts
- Volts
3
V
V
GS
120
GS
3.5
= 10V
= 10V
8V
7V
140
6V
8V
7V
5V
6V
D
5V
4
= 43A Value
T
160
J
4.5
T
= 125ºC
J
2
= 25ºC
180
2.2 2.4 2.6
5
200
5.5
220
6
220
200
180
160
140
120
100
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
-50
-50
0
External Lead Current Limit
Fig. 6. Drain Current v s. Case Temperature
Fig. 4. R
V
Fig. 2. Extended Output Characteristics
GS
2
-25
-25
IXTA 86N20T
= 10V
4
DS(on)
v s. Junction Temperature
V
0
0
T
GS
T
C
J
6
- Degrees Centigrade
= 10V
- Degrees Centigrade
Normalized to I
8V
7V
6V
5V
25
25
V
8
DS
I
@ 25ºC
D
- Volts
= 86A
10
50
50
12
IXTQ 86N20T
75
75
I
IXTP 86N20T
D
D
= 43A
14
= 43A Value
100
100
16
125
125
18
150
150
20