IXTQ50N25T IXYS, IXTQ50N25T Datasheet - Page 2

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IXTQ50N25T

Manufacturer Part Number
IXTQ50N25T
Description
MOSFET N-CH 250V 50A TO-3P
Manufacturer
IXYS
Datasheet

Specifications of IXTQ50N25T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-3P
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.050
Ciss, Typ, (pf)
4000
Qg, Typ, (nc)
78
Trr, Typ, (ns)
166
Trr, Max, (ns)
-
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTQ50N25T
Quantity:
4 000
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Note:
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
fs
SD
iss
oss
rss
thJC
thCH
g(on)
gs
gd
RM
J
J
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1.
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
V
V
Resistive Switching Times
V
R
V
(TO-220)
(TO-3P & TO-247)
V
Repetitive, Pulse Width Limited by T
I
I
V
Test Conditions
Test Conditions
F
F
GS
R
DS
GS
G
GS
GS
= 25A, -di/dt = 250A/μs
= I
= 3.3Ω (External)
= 100V, V
= 10V, I
= 10V, V
= 0V, V
= 0V
= 15V, V
S
, V
GS
= 0V, Note 1
D
DS
DS
= 0.5 • I
GS
DS
= 25V, f = 1MHz
= 0.5 • V
= 0V
4,835,592
4,881,106
= 0.5 • V
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
Characteristic Values
Min.
35
Characteristic Values
Min.
5,237,481
5,381,025
5,486,715
4000
166
0.50
0.25
Typ .
1.9
410
Typ .
6,162,665
6,259,123 B1
6,306,728 B1
23
58
60
14
25
47
25
78
19
22
200
Max.
1.5
0.31
50
Max.
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
A
A
V
S
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
7,157,338B2

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