IXTQ50N25T IXYS, IXTQ50N25T Datasheet - Page 5

• Manufacturer Part Number: IXTQ50N25T
• Description: MOSFET N-CH 250V 50A TO-3P
• Manufacturer: IXYS

Specifications of IXTQ50N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 4000pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.050
• Ciss, Typ, (pf): 4000
• Qg, Typ, (nc): 78
• Trr, Typ, (ns): 166
• Trr, Max, (ns): -
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
10,000
1,000
100
180
160
140
120
100
100
90
80
70
60
50
40
30
20
10
80
60
40
20
10
0
0
3.6
0.4
0
f
= 1 MHz
0.5
4.0
5
Fig. 9. Forward Voltage Drop of
0.6
10
4.4
T
Fig. 7. Input Admittance
J
= 125ºC
Fig. 11. Capacitance
Intrinsic Diode
0.7
15
T
V
V
V
J
4.8
GS
SD
DS
= 125ºC
- 40ºC
- Volts
- Volts
25ºC
- Volts
0.8
20
5.2
0.9
25
C iss
C oss
C rss
T
J
= 25ºC
5.6
1.0
30
6.0
1.1
35
40
1.2
6.4
1.00
0.10
0.01
100
90
80
70
60
50
40
30
20
10
10
0.00001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
DS
10
= 25A
= 10mA
Fig. 12. Maximum Transient Thermal Impedance
10
= 125V
0.0001
20
20
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
30
Fig. 8. Transconductance
0.001
Q
Pulse Width - Seconds
Fig. 10. Gate Charge
G
30
- NanoCoulombs
I
40
D
T
- Amperes
J
= - 40ºC
0.01
50
40
25ºC
125ºC
60
50
0.1
70
60
80
1
70
90
10
100
80