IXTQ50N25T IXYS, IXTQ50N25T Datasheet - Page 4

• Manufacturer Part Number: IXTQ50N25T
• Description: MOSFET N-CH 250V 50A TO-3P
• Manufacturer: IXYS

Specifications of IXTQ50N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 4000pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.050
• Ciss, Typ, (pf): 4000
• Qg, Typ, (nc): 78
• Trr, Typ, (ns): 166
• Trr, Max, (ns): -
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
5
0
5
0
0.0
0.0
0
V
0.2
0.5
GS
Fig. 5. R
= 10V
Fig. 1. Output Characteristics @ T
Fig. 3. Output Characteristics @ T
20
0.4
1.0
DS(on)
0.6
40
1.5
Normalized to I
0.8
2.0
Drain Current
I
V
D
V
DS
DS
- Amperes
60
1.0
- Volts
- Volts
2.5
1.2
80
3.0
V
D
V
1.4
GS
GS
= 25A Value vs.
= 10V
= 10V
7V
3.5
6V
5V
7V
6V
5V
100
1.6
T
J
J
J
= 25ºC
= 125ºC
= 125ºC
4.0
1.8
T
120
J
= 25ºC
2.0
4.5
2.2
5.0
140
160
140
120
100
3.2
2.8
2.4
1.6
1.2
0.8
0.4
80
60
40
20
55
50
45
40
35
30
25
20
15
10
0
2
5
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
Fig. 4. R
GS
-25
-25
4
= 10V
V
Fig. 6. Maximum Drain Current vs.
GS
0
0
DS(on)
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
= 10V
7V
6V
5V
8V
8
T
T
Junction Temperature
C
J
- Degrees Centigrade
Case Temperature
- Degrees Centigrade
Normalized to I
25
25
V
DS
12
- Volts
50
50
I
D
16
= 50A
D
75
75
= 25A Value vs.
20
100
100
I
D
= 25A
J
24
= 25ºC
125
125
150
150
28