IXTQ82N25P IXYS, IXTQ82N25P Datasheet - Page 2

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IXTQ82N25P

Manufacturer Part Number
IXTQ82N25P
Description
MOSFET N-CH 250V 82A TO-3P
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXTQ82N25P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
82A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
142nC @ 10V
Input Capacitance (ciss) @ Vds
4800pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
82 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
82
Rds(on), Max, Tj=25°c, (?)
0.035
Ciss, Typ, (pf)
4800
Qg, Typ, (nc)
142
Trr, Typ, (ns)
200
Pd, (w)
500
Rthjc, Max, (k/w)
0.25
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTQ82N25P
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXTQ82N25P
Manufacturer:
ST
0
Part Number:
IXTQ82N25P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Company:
Part Number:
IXTQ82N25P
Quantity:
2 500
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
S
SM
d(on)
r
d(off)
f
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
fs
SD
iss
oss
rss
thJC
thCS
one or moreof the following U.S. patents:
g(on)
gs
gd
RM
TO-264 (IXTK) Outline
Test Conditions
V
V
V
R
V
TO-3P
TO-264
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
F
F
DS
GS
GS
G
GS
GS
R
= I
= 25 A, -di/dt = 100 A/µs
= 100 V, V
= 10 V; I
= 4 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V,
D
DS
DS
= 0.5 I
DS
GS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
4,850,072
4,881,106
= 0 V
D25
, pulse test
DSS
DSS
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 0.5 I
= 60 A
(T
(T
J
J
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
30
Characteristic Values
Characteristic Values
4800
Typ.
Typ.
0.21
0.15
900
210
142
200
2.0
52
29
20
78
22
32
74
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.25° C/W
250
1.5
82
° C/W
° C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
IXTK 82N25P IXTQ 82N25P
S
A
A
V
TO-3P (IXTQ) Outline
TO-268 (IXTT) Outline
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXTT 82N25P

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