IXTQ82N25P IXYS, IXTQ82N25P Datasheet - Page 4

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IXTQ82N25P

Manufacturer Part Number
IXTQ82N25P
Description
MOSFET N-CH 250V 82A TO-3P
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXTQ82N25P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
82A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
142nC @ 10V
Input Capacitance (ciss) @ Vds
4800pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
82 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
82
Rds(on), Max, Tj=25°c, (?)
0.035
Ciss, Typ, (pf)
4800
Qg, Typ, (nc)
142
Trr, Typ, (ns)
200
Pd, (w)
500
Rthjc, Max, (k/w)
0.25
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTQ82N25P
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXTQ82N25P
Manufacturer:
ST
0
Part Number:
IXTQ82N25P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Company:
Part Number:
IXTQ82N25P
Quantity:
2 500
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
240
200
160
120
100
90
80
70
60
50
40
30
20
10
80
40
0
0
0.3
4
0
f = 1MHz
4.5
5
0.5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Source Current vs.
Source-To-Drain Voltage
T
10
5
T
J
J
= 125ºC
= 125ºC
0.7
-40ºC
25ºC
5.5
V
15
V
C rss
V
GS
SD
C oss
DS
- Volts
- Volts
0.9
20
- Volts
C iss
6
T
J
= 25ºC
6.5
25
1.1
30
7
1.3
7.5
35
1.5
40
8
1000
100
10
80
70
60
50
40
30
20
10
10
1
0
9
8
7
6
5
4
3
2
1
0
10
0
0
T
J
R
V
I
I
= -40ºC
D
G
15
DS(on)
125ºC
20
DS
= 41A
= 10mA
IXTK 82N25P IXTQ 82N25P
25ºC
Fig. 8. Transconductance
= 125V
30
Limit
40
DC
Fig. 10. Gate Charge
Fig. 12. Forw ard-Bias
Safe Operating Area
45
Q
60
G
10ms
I
- nanoCoulombs
D
60
V
- Amperes
DS
80
1ms
100
75
- Volts
100
100µs
90
IXTT 82N25P
120
105 120 135 150
T
T
25µs
J
C
140
= 150ºC
= 25ºC
160
1000
180

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