IXTH88N30P IXYS, IXTH88N30P Datasheet - Page 2

• Manufacturer Part Number: IXTH88N30P
• Description: MOSFET N-CH 300V 88A TO-247
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTH88N30P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 88A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 6300pF @ 25V
• Power - Max: 600W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 88 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 88
• Rds(on), Max, Tj=25°c, (?): 0.04
• Ciss, Typ, (pf): 6300
• Qg, Typ, (nc): 180
• Trr, Typ, (ns): 250
• Pd, (w): 600
• Rthjc, Max, (k/w): 0.21
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents:
90
80
70
60
50
40
30
20
10
0
0
0.5
Fig. 1. Output Characteristics
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
thCS
g(on)
gs
gd
RM
1
V
1.5
V
D S
GS
4,850,072
4,881,106
@ 25
- Volts
= 10V
Test Conditions
V
V
V
R
V
TO-247 and TO-3P
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
5V
TO-264
2
F
F
9V
8V
6V
7V
DS
GS
GS
G
GS
GS
R
= I
= 25 A, -di/dt = 100 A/µs
º
= 100 V, V
C
= 10 V; I
= 3.3 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
4,931,844
5,017,508
5,034,796
S
2.5
, V
GS
= 0 V,
3
D
DS
DS
= 0.5 I
DS
5,049,961
5,063,307
5,187,117
GS
= 25 V, f = 1 MHz
= 0.5 V
Characteristic Curves
= 0.5 V
3.5
= 0 V
D25
, pulse test
4
DSS
5,237,481
5,381,025
5,486,715
DSS
, I
, I
D
D
= 0.5 I
= 60 A
(T
(T
6,162,665
6,259,123 B1
6,306,728 B1
J
J
= 25° C, unless otherwise specified)
200
180
160
140
120
100
= 25° C unless otherwise specified)
D25
80
60
40
20
0
Fig. 2. Extended Output Characteristics
0
Min.
Min.
2
6,404,065 B1
6,534,343
6,583,505
45
IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
V
Characteristic Values
Characteristic Values
GS
4
6300
Typ.
Typ.
0.21
0.15
= 10V
950
190
180
250
3.3
6
60
25
24
96
25
44
90
9V
6,683,344
6,710,405B2
6,710,463
V
@ 25
8
D S
Max.
Max.
8V
0.21° C/W
7V
6V
5V
220
10
1.5
- Volts
88
º
C
° C/W
° C/W
12
nC
nC
nC
µC
pF
pF
pF
6,727,585
6,759,692
6771478 B2
ns
ns
ns
ns
ns
S
A
A
V
14
16
18
20