IXTH88N30P IXYS, IXTH88N30P Datasheet - Page 4

• Manufacturer Part Number: IXTH88N30P
• Description: MOSFET N-CH 300V 88A TO-247
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTH88N30P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 88A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 6300pF @ 25V
• Power - Max: 600W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 88 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 88
• Rds(on), Max, Tj=25°c, (?): 0.04
• Ciss, Typ, (pf): 6300
• Qg, Typ, (nc): 180
• Trr, Typ, (ns): 250
• Pd, (w): 600
• Rthjc, Max, (k/w): 0.21
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
280
240
200
160
120
100
80
40
0
0.4
0
1.00
0.10
0.01
f = 1MHz
5
1
0.6
T
J
Fig. 11. Capacitance
Fig. 9. Source Current vs.
Source-To-Drain Voltage
= 125ºC
10
0.8
V
15
V
S D
D S
- Volts
20
- Volts
T
1
J
= 25ºC
25
Fig. 13. Maximum Transient Thermal Resistance
1.2
C oss
C rss
30
C iss
1.4
10
35
Pulse Width - milliseconds
1.6
40
1000
100
10
10
1
9
8
7
6
5
4
3
2
1
0
10
0
R
V
I
I
DS(on)
D
G
IXTH 88N30P IXTK 88N30P
DS
20
IXTQ 88N30P IXTT 88N30P
= 44A
= 10mA
100
= 150V
Limit
40
Fig. 10. Gate Charge
Fig. 12. Forw ard-Bias
Safe Operating Area
DC
Q
60
G
- nanoCoulombs
V
10ms
D S
80
100
1ms
- Volts
100
100µs
120
140
T
T
25µs
J
C
= 150ºC
= 25ºC
1000
160
1000
180