IXTH88N30P IXYS, IXTH88N30P Datasheet - Page 5

• Manufacturer Part Number: IXTH88N30P
• Description: MOSFET N-CH 300V 88A TO-247
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTH88N30P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 88A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 6300pF @ 25V
• Power - Max: 600W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 88 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 88
• Rds(on), Max, Tj=25°c, (?): 0.04
• Ciss, Typ, (pf): 6300
• Qg, Typ, (nc): 180
• Trr, Typ, (ns): 250
• Pd, (w): 600
• Rthjc, Max, (k/w): 0.21
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TO-247 (IXTH) Outline
© 2006 IXYS All rights reserved
TO-264 (IXTK) Outline
Terminals:
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
1. Gate
3. Source
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
.4
1
21.46
16.26
20.32
2
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
2,4. Drain
3
.8
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
TO-3P (IXTQ) Outline
IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
TO-268 (IXTT) Outline
Terminals:
1. Gate
3. Source
2,4. Drain