IXTH60N25 IXYS, IXTH60N25 Datasheet

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IXTH60N25

Manufacturer Part Number
IXTH60N25
Description
MOSFET N-CH 250V 60A TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXTH60N25

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
46 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
164nC @ 10V
Input Capacitance (ciss) @ Vds
4400pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.046 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.046
Ciss, Typ, (pf)
4400
Qg, Typ, (nc)
164
Trr, Typ, (ns)
300
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2003 IXYS All rights reserved
Standard
Power MOSFET
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
(T
V
V
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
DGR
GS
GSM
AR
D
GS(th)
DSS
AS
DSS
DS(on)
d
J
= 25°C unless otherwise specified)
T
Mounting torque
TO-264
Test conditions
T
T
Continuous
Transient
T
T
I
T
Test Conditions
V
V
V
V
V
V
Pulse test, t 300 ms, duty cycle d 2%
T
T
S
C
J
J
C
C
J
GS
DS
GS
DS
GS
GS
C
C
= 25°C to 150°C
= 25°C to 150°C; R
= 25 C MOSFET chip capability
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= ±20 V DC, V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
GS
DSS
, di/dt
, I
D
D
= 250 A
D
= 250 A
= 15A
G
100 A/ s, V
= 2
DS
= 0
GS
= 1.0 M
DD
T
Advance Technical Information
J
V
= 125°C
DSS
JM
250
Min. Typ.
2.0
Characteristic Values
IXTH 60N25
-55 ... +150
-55 ... +150
1.13/10 Nm/lb.in.
Maximum ratings
±20
±30
250
250
240
400
150
300
1.5
60
60
50
5
6
±100
250
4.0
25
46 m
Max.
V/ns
mJ
nA
W
C
C
C
A
A
A
V
V
A
A
C
g
J
V
V
V
V
TO-247 AD
G = Gate
S = Source
Features
Applications
Advantages
Low R
Rugged polysilicon gate cell structure
International standard package
JEDEC TO-247 AD
Fast switching times
High commutating dv/dt rating
Uninterruptible Power Supplies (UPS)
Motor controls
DC choppers
Switched-mode and resonant-mode
power supplies
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
V
I
R
D(cont)
DSS
G
DS(on)
D
DS (on)
S
HDMOS
= 250
=
=
D
Tab = Drain
TM
= Drain
60
46 m
process
DS99010(03/03)
D (TAB)
V
A

Related parts for IXTH60N25

IXTH60N25 Summary of contents

Page 1

... ± GSS DSS DS DSS 15A DS(on Pulse test, t 300 ms, duty cycle d 2% © 2003 IXYS All rights reserved Advance Technical Information IXTH 60N25 Maximum ratings 250 = 1.0 M 250 ±20 ±30 60 240 1 DSS 400 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 6 300 Characteristic Values Min ...

Page 2

... Pulse test, t 300 µs, duty cycle 25A, -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more Characteristic values Min. Typ. , pulse test 28 36 4400 800 290 0 DSS D D25 60 17 ...

Page 3

... V - Volts DS Fig. 3. Output Characteristics @ 125 Deg Volts DS Fig Normalized to I DS(on) Value vs 25º Amperes D © 2003 IXYS All rights reserved 2 D25 25º IXTH 60N25 Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Normalized to I DS(on) D25 Junction Temperature ...

Page 4

... iss 1 000 C oss C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 6 25º 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 IXTH 60N25 Fig ...

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