IXTH60N25 IXYS, IXTH60N25 Datasheet - Page 3

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IXTH60N25

Manufacturer Part Number
IXTH60N25
Description
MOSFET N-CH 250V 60A TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXTH60N25

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
46 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
164nC @ 10V
Input Capacitance (ciss) @ Vds
4400pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.046 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.046
Ciss, Typ, (pf)
4400
Qg, Typ, (nc)
164
Trr, Typ, (ns)
300
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2003 IXYS All rights reserved
3.4
2.6
2.2
0.6
1 .8
1 .4
60
50
40
30
20
60
50
40
30
20
1 0
1 0
3
0
1
0
0
0
0
V
Fig. 5. R
GS
0.5
Fig. 3. Output Characteristics
Fig. 1. Output Characteristics
V
= 1 0V
1
30
GS
V
= 1 0V
GS
9V
8V
7V
1
2
DS(on)
= 1 0V
I
@ 125 Deg. C
D
Value vs. I
9V
8V
7V
@ 25 Deg. C
V
60
V
- Amperes
DS
1 .5
DS
Normalized to I
3
T
- Volts
J
- Volts
= 1 25ºC
2
90
4
D
2.5
T
5
J
= 25ºC
6V
5V
6V
5V
1 20
D25
3
6
1 50
3.5
7
1 50
1 25
1 00
75
50
25
2.5
0.5
1 .5
70
60
50
40
30
20
0
1 0
3
2
0
1
Fig. 4. R
-50
Fig. 2. Extended Output Characteristics
-50
0
V
-25
-25
GS
Fig. 6. Drain Current vs. Case
= 1 0V
DS(on)
2
T
T
Junction Temperature
J
C
V
0
0
- Degrees Centigrade
- Degrees Centigrade
GS
Normalized to I
@ 25 deg. C
= 1 0V
Temperature
25
25
9V
8V
V
I
D
4
DS
= 60A
- Volts
50
50
6
75
75
IXTH 60N25
I
D
6V
5V
7V
= 30A
D25
1 00
1 00
Value vs.
8
1 25
1 25
1 50
1 50
1 0

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