IXTH60N25 IXYS, IXTH60N25 Datasheet - Page 4

• Manufacturer Part Number: IXTH60N25
• Description: MOSFET N-CH 250V 60A TO-247
• Manufacturer: IXYS

Specifications of IXTH60N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 46 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 164nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.046 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.046
• Ciss, Typ, (pf): 4400
• Qg, Typ, (nc): 164
• Trr, Typ, (ns): 300
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
1 0000
1 000
1 00
1 80
1 50
1 20
1 20
1 00
90
60
30
80
60
40
20
0
0
Fig. 9. Source Current vs. Source-To-Drain
0.4
0
4
4.5
Fig. 7. Input Admittance
f = 1 M Hz
5
T
J
0.6
Fig. 11. Capacitance
= 1 25ºC
T
1 0
J
5
= -40ºC
1 25ºC
25ºC
C
C
C
5.5
V
V
1 5
iss
oss
rss
V
0.8
SD
GS
DS
Voltage
- Volts
- Volts
20
- Volts
6
T
6.5
25
1
J
= 25ºC
30
7
1 .2
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
7.5
35
40
1 .4
8
75
60
45
30
0.01
1 5
0
0.1
1 0
8
6
4
2
0
1
0
0
Fig. 12. Maximum Transient Thermal
1
T
J
= -40ºC
1 25ºC
V
I
I
D
G
Fig. 8. Transconductance
25ºC
30
DS
=30A
= 1 0mA
30
Pulse Width - milliseconds
= 1 25V
Fig. 10. Gate Charge
Q
60
G
60
1 0
I
Resistance
D
- nanoCoulombs
- Amperes
90
90
IXTH 60N25
1 20
1 20
1 00
1 50
1 50
6,534,343
1 80
1 80
1 000