IXTX110N20L2 IXYS, IXTX110N20L2 Datasheet - Page 2

• Manufacturer Part Number: IXTX110N20L2
• Description: MOSFET N-CH 200V 110A PLUS247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTX110N20L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4.5V @ 3mA
• Gate Charge (qg) @ Vgs: 500nC @ 10V
• Input Capacitance (ciss) @ Vds: 23000pF @ 25V
• Power - Max: 960W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 110
• Rds(on), Max, Tj=25°c, (?): 0.024
• Ciss, Typ, (pf): 23000
• Qg, Typ, (nc): 500
• Trr, Typ, (ns): 420
• Pd, (w): 960
• Rthjc, Max, (k/w): 0.13
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe-Operating-Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
I
I
V
t
I
Q
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
(T
(T
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
F
F
DS
GS
GS
GS
DS
GS
R
G
= 55A, V
= 55A, -di/dt = 100A/μs,
= 100V, V
= 10V, I
= 10V, V
= 0V, V
= 10V, V
= 1Ω (External)
= 200V, I
= 0V
ADVANCE TECHNICAL INFORMATION
GS
D
DS
DS
GS
= 0.5 • I
DS
= 0V, Note 1
D
= 25V, f = 1MHz
= 0.5 • V
= 0V
= 0.5 • V
= 2.88A, T
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
C
, I
= 75°C, Tp = 5s
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
575
55
Min.
Min.
Characteristic Values
Min.
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
2160
0.15
420
Typ.
Typ.
Typ.
320
100
135
500
110
182
8.3
75
39
23
40
33
0.13
1.35
6,404,065 B1
6,534,343
6,583,505
110
440
95
Max.
Max.
Max.
°C/W
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
ns
W
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
PLUS 247
TO-264 (IXTK) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
20.80
15.75
19.81
TM
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
Millimeter
5.45 BSC
(IXTX) Outline
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
IXTK110N20L2
IXTX110N20L2
7,005,734 B2
7,063,975 B2
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
Inches
7,157,338B2
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190