IXTX110N20L2 IXYS, IXTX110N20L2 Datasheet - Page 4

• Manufacturer Part Number: IXTX110N20L2
• Description: MOSFET N-CH 200V 110A PLUS247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTX110N20L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4.5V @ 3mA
• Gate Charge (qg) @ Vgs: 500nC @ 10V
• Input Capacitance (ciss) @ Vds: 23000pF @ 25V
• Power - Max: 960W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 110
• Rds(on), Max, Tj=25°c, (?): 0.024
• Ciss, Typ, (pf): 23000
• Qg, Typ, (nc): 500
• Trr, Typ, (ns): 420
• Pd, (w): 960
• Rthjc, Max, (k/w): 0.13
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
160
140
120
100
320
280
240
200
160
120
100
80
60
40
20
80
40
0
0
3.5
0.3
0
0.4
f
4.0
5
= 1 MHz
0.5
Fig. 9. Forward Voltage Drop of
0.6
10
4.5
T
J
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.7
= 125ºC
15
Intrinsic Diode
V
V
0.8
V
T
5.0
GS
SD
J
DS
= 125ºC
- Volts
- Volts
- Volts
- 40ºC
25ºC
0.9
20
T
J
5.5
1.0
= 25ºC
25
1.1
C iss
C oss
C rss
6.0
1.2
30
1.3
6.5
35
1.4
1.5
7.0
40
1.000
0.100
0.010
0.001
140
120
100
80
60
40
20
16
14
12
10
0.00001
0
8
6
4
2
0
0
0
V
I
I
D
G
DS
Fig. 12. Maximum Transient Thermal Impedance
= 55A
= 10mA
100
= 100V
20
0.0001
200
40
Fig. 8. Transconductance
0.001
Q
Fig. 10. Gate Charge
Pulse Width - Seconds
G
300
60
I
- NanoCoulombs
D
- Amperes
0.01
400
80
IXTK110N20L2
IXTX110N20L2
100
500
0.1
T
120
J
600
= - 40ºC
25ºC
125ºC
1
140
700
160
800
10