IXTX110N20L2 IXYS, IXTX110N20L2 Datasheet - Page 5

• Manufacturer Part Number: IXTX110N20L2
• Description: MOSFET N-CH 200V 110A PLUS247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTX110N20L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4.5V @ 3mA
• Gate Charge (qg) @ Vgs: 500nC @ 10V
• Input Capacitance (ciss) @ Vds: 23000pF @ 25V
• Power - Max: 960W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 110
• Rds(on), Max, Tj=25°c, (?): 0.024
• Ciss, Typ, (pf): 23000
• Qg, Typ, (nc): 500
• Trr, Typ, (ns): 420
• Pd, (w): 960
• Rthjc, Max, (k/w): 0.13
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
1,000
100
10
1
1
T
T
Single Pulse
J
C
= 150ºC
= 25ºC
R
DS(on)
Fig. 13. Forward-Bias Safe Operating Area
Limit
10
@ T
V
DS
C
- Volts
= 25ºC
100
25µs
100µs
1ms
10ms
100ms
DC
1,000
1,000
100
10
1
1
T
T
Single Pulse
J
C
= 150ºC
= 75ºC
R DS(on) Limit
Fig. 14. Forward-Bias Safe Operating Area
10
@ T
V
DS
C
- Volts
= 75ºC
IXTK110N20L2
IXTX110N20L2
100
IXYS REF: T_110N20L2(9R)9-16-09
25µs
100µs
1ms
10ms
100ms
DC
1,000