TPC6006-H(TE85L,F) Toshiba

TPC6006-H(TE85L,F)

Manufacturer Part Number

TPC6006-H(TE85L,F)

Description

MOSFET N-CH 40V 3.9A VS6 2-3T1A

Manufacturer

Toshiba

Specifications of TPC6006-H(TE85L,F)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

75 mOhm @ 1.9A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

3.9A

Vgs(th) (max) @ Id

2.3V @ 1mA

Gate Charge (qg) @ Vgs

4.4nC @ 10V

Input Capacitance (ciss) @ Vds

251pF @ 10V

Power - Max

700mW

Mounting Type

Surface Mount

Package / Case

2-3T1A

Configuration

Single Quad Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.075 Ohms

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

3.9 A

Power Dissipation

2.2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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