TPCP8101(TE85L,F,M Toshiba, TPCP8101(TE85L,F,M Datasheet - Page 5

• Manufacturer Part Number: TPCP8101(TE85L,F,M
• Description: MOSFET P-CH 20V 5.6A 2-3V1K
• Manufacturer: Toshiba

Specifications of TPCP8101(TE85L,F,M

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 2.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.6A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 19nC @ 5V
• Input Capacitance (ciss) @ Vds: 1550pF @ 10V
• Power - Max: 840mW
• Mounting Type: Surface Mount
• Package / Case: 2-3V1K
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
2.0
1.5
1.0
0.5
160
120
100
80
40
10
0
0
−80
0.1
0
(1) t = 5 s
(1) DC
(2) t = 5 s
(2) DC
V GS = −1.8 V
Common source
Pulse test
−2.5 V
−4.5 V
V GS = 0 V
f = 1 MHz
Ta = 25°C
−40
Drain−source voltage V
Ambient temperature Ta (
Ambient temperature Ta (°C)
40
1.0
0
R
DS (ON)
C – V
I D = −1.4 A
P
−2.8 A
D
40
80
– Ta
(1) Device mounted on a
(2) Device mounted on a
I D = −1.4, −2.8, −5.6 A
DS
– Ta
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
80
10
DS
I D = −1.4, −2.8 A
120
C oss
C iss
C rss
°
120
C)
(V)
−5.6 A
160
160
100
5
−100
−10
−20
−16
−12
2.0
1.5
1.0
0.5
−1
−8
−4
−80
0
0
0
0
−2.0 V
Common source
Ta = 25°C
Pulse test
Common source
V DS = −10 V
I D = −200 µA
Pulse test
V DS
−4 V
−1.8 V
Drain−source voltage V
−40
Ambient temperature Ta (
0.4
Total gate charge Q
8
−1 V
Dynamic input/output
0
characteristics
0.8
16
I
V GS = 0 V
DR
V
−4 V
th
– V
40
−8 V
– Ta
DS
1.2
24
V DD = −16 V
80
g
V GS
Common source
I D = −5.6 A
Ta = 25°C
Pulse test
DS
(nC)
1.6
32
°
(V)
C)
120
TPCP8101
2006-11-17
160
40
2
−20
−16
−12
−8
−4
0