TPCF8102(TE85L,F,M Toshiba, TPCF8102(TE85L,F,M Datasheet - Page 6

• Manufacturer Part Number: TPCF8102(TE85L,F,M
• Description: MOSFET P-CH 20V 6A VS8 2-3U1A
• Manufacturer: Toshiba

Specifications of TPCF8102(TE85L,F,M

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 19nC @ 5V
• Input Capacitance (ciss) @ Vds: 1550pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1A)
• Configuration: Single Hex Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 6 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

−100
−0.1
−10
−1
−0.1
*: Single pulse
Curves must be derated
linearly with increase in
temperature
I D max (pulsed)*
Ta = 25°C
Drain-source voltage V
1000
100
Safe operating area
0.1
10
−1
1
1 m
10 ms*
10 m
−10
DS
1 ms*
(V)
V DSS max
100 m
−100
Device mounted on a glass-epoxy board (b) (Note 2b)
Pulse width t
r
th
Device mounted on a glass-epoxy board (a) (Note 2a)
6
– t
1
w
w
(s)
10
100
1000
TPCF8102
2006-11-16