2SK2201(TE16L1,NQ) Toshiba, 2SK2201(TE16L1,NQ) Datasheet - Page 5

• Manufacturer Part Number: 2SK2201(TE16L1,NQ)
• Description: MOSFET N-CH 100V 3A 2-7B2B
• Manufacturer: Toshiba

Specifications of 2SK2201(TE16L1,NQ)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 13.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 10V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: 2-7J1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

5
R
V
G
DD
= 25 Ω
= 50 V, L = 25 mH
−15 V
15 V
TEST CIRCUIT
Ε AS
V
DD
WAVEFORM
=
B
1
2
VDSS
I
⋅
AR
L
⋅
2 I
⋅
⎛
⎜
⎜
⎝
B VDSS
V
DS
2010-02-05
B VDSS
2SK2201
−
V DD
⎞
⎟
⎟
⎠