2SK2989(F) Toshiba, 2SK2989(F) Datasheet - Page 5

• Manufacturer Part Number: 2SK2989(F)
• Description: MOSFET N-CH 50V 5A TO-92
• Manufacturer: Toshiba

Specifications of 2SK2989(F)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.2V @ 1mA
• Gate Charge (qg) @ Vgs: 6.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 145pF @ 10V
• Power - Max: 900mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
100
0.1
10
1
0.01
Curves must be derated linearly
with increase in temperature.
※ Single pulse
I
D
Ta=25℃
max (continuous)
I
DC OPEATION
T
D
a
max (pulse)*
=25°C
Drain-source voltage V DS (V)
SAFE OPERATING AREA
0.1
1
V DSS max
1 ms *
10
100 μs *
100
5
2009-09-29
2SK2989