TPC8111(TE12L,Q,M) Toshiba, TPC8111(TE12L,Q,M) Datasheet
TPC8111(TE12L,Q,M)
Specifications of TPC8111(TE12L,Q,M)
Related parts for TPC8111(TE12L,Q,M)
TPC8111(TE12L,Q,M) Summary of contents
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
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Thermal Characteristics Characteristics Thermal resistance, channel to ambient ( (Note 2a) Thermal resistance, channel to ambient ( (Note 2b) Marking (Note Part No. (or abbreviation code) ...
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Electrical Characteristics Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF ...
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I – −10 −10 −3 −2.5 Common source Ta = 25°C −5 −4 −2.4 Pulse test −8 −2.3 −6 −2.2 −4 −2.1 − − −2 −4 −6 −8 0 Drain-source voltage V ...
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R – (ON) 25 Common source Pulse test −11 A, −5.5 A, −2 −4 −11 A, −5.5 A, −2.5 A − −80 ...
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Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b 100 10 1 0.1 0.001 0.01 Safe Operating Area 100 I D max (pulse)* 1 ...
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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...