2SK2865(TE16L1,NQ) Toshiba, 2SK2865(TE16L1,NQ) Datasheet - Page 2

• Manufacturer Part Number: 2SK2865(TE16L1,NQ)
• Description: MOSFET N-CH 600V 2A SC-64
• Manufacturer: Toshiba

Specifications of 2SK2865(TE16L1,NQ)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 10V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: 2-7J1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Gate−source breakdown voltage
Drain cutoff current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“Miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K2865
Characteristic
Characteristic
Rise time
Turn−on time
Fall time
Turn−off time
Part No.
(or abbreviation code)
Lot No.
Note 4
(Note 1)
(Note 1)
V
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) GSS
(BR) DSS
DS (ON)
V
I
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DRP
DSS
I
V
Q
t
t
Q
DSF
DR
t
oss
t
on
off
rss
t
iss
rr
gs
gd
th
fs
r
f
g
rr
|
Note 4 : A line under a Lot No. identifies the indication of product Labels
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
V
I
V
I
V
V
V
V
V
t = 1 ms
t = 100 μs
I
I
dI
G
D
DR
DR
GS
DS
DS
GS
DS
DS
DD
DR
= 10 mA, V
= ±10 μA, V
= 2 A, V
= 2 A, V
= 600 V, V
= 10 V, I
= 10 V, I
= 10 V, V
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
= ±25 V, V
= 10 V, I
≈ 480 V, V
/ dt = 100 A/μs
GS
GS
2
D
D
D
GS
(Ta = 25°C)
GS
Test Condition
Test Condition
DS
= 1 mA
= 1 A
DS
GS
= 1 A
GS
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 0 V
= 10 V, I
—
D
= 2 A
Min
±30
600
Min
2.0
0.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1000
Typ.
Typ.
380
120
4.2
1.7
3.5
—
—
—
—
—
40
15
25
20
80
—
—
—
—
9
5
4
2010-02-05
2SK2865
Max
Max
−1.5
±10
100
4.0
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2
5
8
Unit
Unit
μA
μA
nC
μC
pF
ns
ns
V
V
V
Ω
S
A
A
A
V