TPC8115(TE12L,Q,M) Toshiba, TPC8115(TE12L,Q,M) Datasheet - Page 2
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TPC8115(TE12L,Q,M)
Manufacturer Part Number
TPC8115(TE12L,Q,M)
Description
MOSFET P-CH 20V 10A SOP8 2-6J1B
Manufacturer
Toshiba
Datasheet
1.TPC8115TE12LQM.pdf
(7 pages)
Specifications of TPC8115(TE12L,Q,M)
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1.2V @ 200µA
Gate Charge (qg) @ Vgs
115nC @ 5V
Input Capacitance (ciss) @ Vds
9130pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
2-6J1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
Note 3: V
Note 4: Repetitive rating; pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
(Note 5)
※ Weekly code:
(a) Device mounted on a glass-epoxy board (a)
T P C 8 1 1 5
DD
Characteristics
= −16 V, T
(a)
ch
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
= 25°C (initial), L = 0.2 mH, R
(Three digits)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
Symbol
th (ch-a)
th (ch-a)
2
G
65.8
Max
125
= 25 Ω, I
(b) Device mounted on a glass-epoxy board (b)
°C/W
°C/W
AR
Unit
= −10A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
2006-11-15
TPC8115