TPC8115(TE12L,Q,M) Toshiba, TPC8115(TE12L,Q,M) Datasheet - Page 2

• Manufacturer Part Number: TPC8115(TE12L,Q,M)
• Description: MOSFET P-CH 20V 10A SOP8 2-6J1B
• Manufacturer: Toshiba

Specifications of TPC8115(TE12L,Q,M)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 115nC @ 5V
• Input Capacitance (ciss) @ Vds: 9130pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 2-6J1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
Note 3: V
Note 4: Repetitive rating; pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
(Note 5)
※ Weekly code:
(a) Device mounted on a glass-epoxy board (a)
T P C 8 1 1 5
DD
Characteristics
= −16 V, T
(a)
ch
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
= 25°C (initial), L = 0.2 mH, R
(Three digits)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
Symbol
th (ch-a)
th (ch-a)
2
G
65.8
Max
125
= 25 Ω, I
(b) Device mounted on a glass-epoxy board (b)
°C/W
°C/W
AR
Unit
= −10A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
2006-11-15
TPC8115