2SK2782(TE16L1,Q) Toshiba, 2SK2782(TE16L1,Q) Datasheet - Page 5
2SK2782(TE16L1,Q)
Manufacturer Part Number
2SK2782(TE16L1,Q)
Description
MOSFET N-CH 60V 20A SC-64
Manufacturer
Toshiba
Datasheet
1.2SK2782TE16L1Q.pdf
(6 pages)
Specifications of 2SK2782(TE16L1,Q)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
880pF @ 10V
Power - Max
40W
Mounting Type
Surface Mount
Package / Case
2-7B5B
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.055 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
R
V
G
DD
= 25 Ω
5
= 25 V, L = 530 μH
E
AS
=
1
2
⋅
L
⋅
I
2
⋅
⎛
⎜
⎝
B
2009-12-21
2SK2782
VDSS
B
VDSS
−
V
DD
⎞
⎟
⎠