2SK3466(TE24L,Q) Toshiba, 2SK3466(TE24L,Q) Datasheet - Page 4

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2SK3466(TE24L,Q)

Manufacturer Part Number
2SK3466(TE24L,Q)
Description
MOSFET N-CH 500V 5A SC-97
Manufacturer
Toshiba
Datasheet

Specifications of 2SK3466(TE24L,Q)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
780pF @ 10V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
2-9F1C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
2000
1000
500
300
100
50
30
10
80
60
40
20
−80
5
4
3
2
1
0
5
0.1
0
0
Common source
V GS = 10 V
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
−40
0.3 0.5
Drain-source voltage V DS (V)
40
Case temperature Tc (°C)
Case temperature Tc (°C)
Capacitance – V
0
1
R
80
DS (ON)
P
D
40
3
− Tc
5
− Tc
120
80
10
DS
I D = 5 A
160
120
30 50
C oss
C rss
C iss
2.5
1.2
160
100
200
4
500
400
300
200
100
0.5
0.3
0.1
10
−80
3
1
5
4
3
2
1
0
0
0
0
Common source
Tc = 25°C
Pulse test
Dynamic input/output characteristics
−0.2
−40
Drain-source voltage V DS (V)
V DS
5
Total gate charge Q
Case temperature Tc (°C)
−0.4
0
10
I
10
DR
V
5
V DD = 100 V
th
3
−0.6
− V
1
40
− Tc
V GS
DS
V GS = 0, −1 V
15
−0.8
400
g
80
Common source
V DS = 10 V
I D = 1 mA
Pulse test
(nC)
Common source
I D = 5 A
Tc = 25°C
Pulse test
200
20
−1.0
120
2010-04-06
2SK3466
−1.2
160
25
20
16
12
8
4
0

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