2SK2719(F) Toshiba, 2SK2719(F) Datasheet - Page 2

• Manufacturer Part Number: 2SK2719(F)
• Description: MOSFET N-CH 900V 3A 2-16C1B
• Manufacturer: Toshiba

Specifications of 2SK2719(F)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Marking
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
TOSHIBA
K2719
Characteristics
Characteristics
Part No. (or abbreviation code)
Lot No.
Note 4
Rise time
Turn-on time
Fall time
Turn-off time
(Note 1)
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) GSS
(BR) DSS
DS (ON)
V
⎪Y
I
I
C
I
C
C
Q
Q
GSS
DRP
DSS
I
V
Q
t
t
Q
DSF
DR
t
oss
on
off
rss
t
t
iss
rr
gs
gd
th
fs
r
f
rr
g
⎪
Note 4: A line under a Lot No. identifies the indication of product
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
V
I
V
I
V
V
V
V
Duty ≤ 1%, t
V
I
I
dI
G
D
DR
DR
GS
DS
DS
GS
DS
DS
DD
V
DR
= ±10 μA, V
= 10 mA, V
GS
= 3 A, V
= 3 A, V
/dt = 100 A/μs
= 720 V, V
= 10 V, I
= 20 V, I
= 25 V, V
= ±30 V, V
= 10 V, I
∼ − 400 V, V
10 V
0 V
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
2
GS
GS
w
Test Condition
Test Condition
D
D
D
GS
GS
= 10 μs
DS
GS
= 1 mA
= 1.5 A
DS
= 1.5 A
GS
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
(Ta = 25°C)
⎯
⎯
= 0 V
= 0 V
= 10 V, I
I
V
D
DD
= 1.5 A
∼ − 200 V
D
= 3 A
V
OUT
0.65
900
Min
±30
Min
2.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1100
Typ.
Typ.
750
110
3.7
2.6
7.5
10
70
15
55
30
25
13
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2009-09-29
2SK2719
−1.9
Max
Max
±10
100
4.0
4.3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
3
9
Unit
Unit
nC
nC
nC
μC
μA
μA
pF
pF
pF
ns
ns
Ω
V
V
V
S
A
A
V