2SK3700(F) Toshiba, 2SK3700(F) Datasheet - Page 4
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2SK3700(F)
Manufacturer Part Number
2SK3700(F)
Description
MOSFET N-CH 900V 5A SC-67
Manufacturer
Toshiba
Datasheet
1.2SK3700F.pdf
(6 pages)
Specifications of 2SK3700(F)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
1150pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
10000
1000
100
10
10
−80
200
150
100
8
6
4
2
0
0.1
50
0
COMMON SOURCE
V GS = 0 V
f = 1 MHz
Tc = 25°C
0
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
PULSE TEST
CASE TEMPERATURE Tc (°C)
−40
V GS = 10 V
40
CASE TEMPERTATURE Tc (°C)
CAPACITANCE – V
0
1
R
DS (ON)
80
40
3
P
I D = 5A
D
5
– Tc
− Tc
120
10
80
1.5
DS
DS
120
160
30 50
C rss
C oss
C iss
3
(V)
160
100
200
4
500
400
300
200
100
0.5
0.3
0.1
10
0
−80
5
3
1
5
4
3
2
1
0
0
0
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
V DS = 10 V
I D = 1 mA
PULSE TEST
COMMON SOURCE
TOTAL GATE CHARGE Q
CASE TEMPERATURE Tc (°C)
PULSE TEST
10
−40
Tc = 25°C
DYNAMIC INPUT / OUTPUT
−0.4
V DS
10
CHARACTERISTICS
3
0
I
V GS
DR
V
th
−0.8
– V
40
20
V GS = 0, −1 V
1
– Tc
DS
V DD = 100 V
COMMON SOURCE
I D = 5 A
Tc = 25°C
PULSE TEST
80
−1.2
g
30
DS
200
(nC)
120
2009-09-29
2SK3700
(V)
400
−1.6
160
40
20
16
12
8
4
0