2SK2866(F) Toshiba, 2SK2866(F) Datasheet

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2SK2866(F)

Manufacturer Part Number
2SK2866(F)
Description
MOSFET N-CH 600V 10A TO-220AB
Manufacturer
Toshiba
Datasheet
1.2SK2866F.pdf (6 pages)

Specifications of 2SK2866(F)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
2040pF @ 10V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DD
Characteristics
= 90 V, T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
GS
Pulse (Note 1)
DC (Note 1)
= 20 kΩ)
ch
= 25°C (initial), L = 6.36 mH, R
(Note 2)
: I
: V
DSS
th
= 2.0 to 4.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
Symbol
: R
: |Y
V
V
V
E
E
T
I
I
T
DGR
P
R
R
GSS
DSS
I
DP
AR
stg
AS
AR
Symbol
D
ch
D
th (ch−c)
th (ch−a)
DS (ON)
2SK2866
fs
| = 9.0 S (typ.)
DS
= 0.54 Ω (typ.)
−55 to 150
= 10 V, I
DS
Rating
12.5
600
600
±30
125
363
150
10
40
10
83.3
1
Max
1.0
= 600 V)
G
= 25 Ω, I
D
= 1 mA)
°C / W
°C / W
Unit
Unit
AR
mJ
mJ
°C
°C
W
V
V
V
A
A
A
= 10 A
Weight: 1.9 g (typ.)
JEDEC
JEITA
TOSHIBA
TO-220AB
2-10P1B
SC-46
2009-09-29
2SK2866
Unit: mm

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2SK2866(F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

3 2SK2866 2009-09-29 ...

Page 4

4 2SK2866 2009-09-29 ...

Page 5

Ω 6. 2SK2866 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − ⎝ ⎠ VDSS DD ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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