2SK1359(F) Toshiba, 2SK1359(F) Datasheet

2SK1359(F)

Manufacturer Part Number

2SK1359(F)

Description

MOSFET N-CH 1KV 5A 2-16C1B

Manufacturer

Toshiba

Datasheet

1.2SK1359F.pdf (6 pages)

Specifications of 2SK1359(F)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

3.8 Ohm @ 2A, 10V

Drain To Source Voltage (vdss)

1000V (1kV)

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

3.5V @ 1mA

Gate Charge (qg) @ Vgs

60nC @ 10V

Input Capacitance (ciss) @ Vds

700pF @ 25V

Power - Max

125W

Mounting Type

Through Hole

Package / Case

2-16C1B (TO-247 N)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

3.8 Ohms

Drain-source Breakdown Voltage

1000 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

5 A

Power Dissipation

125 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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DC−DC Converter and Motor Drive Applications

Absolute Maximum Ratings

Thermal Characteristics

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII

Pulse (Note 1)

= 20 kΩ)

: I

: V

(Note 1)

DSS

= 1.5 to 3.5 V (V

= 300 μA (max) (V

(Ta = 25°C)

Symbol

th (ch−c)

th (ch−a)

: R

: |Y

DGR

GSS

DSS

stg

DS (ON)

2SK1359

| = 2.0 S (typ.)

= 3.0 Ω (typ.)

= 10 V, I

−55~150

Rating

1000

Max

±30

125

150

1.0

= 800 V)

= 1 mA)

°C / W

Unit

°C

Weight: 4.6 g (typ.)

JEDEC

JEITA

TOSHIBA

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

2-16C1B

)

2009-09-29

―

2SK1359

Unit: mm

Related parts for 2SK1359(F)

2SK1359(F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

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Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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