2SK3176(F) Toshiba, 2SK3176(F) Datasheet

MOSFET N-CH 200V 30A 2-16C1B

2SK3176(F)

Manufacturer Part Number
2SK3176(F)
Description
MOSFET N-CH 200V 30A 2-16C1B
Manufacturer
Toshiba
Datasheet

Specifications of 2SK3176(F)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
3.5V @ 1mA
Gate Charge (qg) @ Vgs
125nC @ 10V
Input Capacitance (ciss) @ Vds
5400pF @ 10V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Transistor Polarity
N Channel
Continuous Drain Current Id
30A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
52mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.5V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.052 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
150 W
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching Regulator, DC-DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement-mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum junction temperature.
Note 4:
This transistor is an electrostatic sensitive device.
Please handle with caution.
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS V)
= 50 V, T
Characteristics
GS
Pulse (Note 1)
DC (Note 1)
DSS
= 20 kΩ)
th
ch
(Tc = 25°C)
= 1.5 to 3.5 V (V
= 25°C (initial), L = 1.66 mH, R
(Note 2)
= 100 mA (max) (V
DS (ON)
fs
(Ta = 25°C)
| = 30 S (typ.)
Symbol
V
V
V
E
E
T
I
I
T
DGR
P
GSS
DSS
I
DP
AR
stg
AS
AR
D
ch
D
2SK3176
= 38 mΩ (typ.)
DS
DS
= 10 V, I
R
R
Symbol
th (ch-c)
th (ch-a)
= 200 V)
−55 to 150
Rating
200
200
±20
120
150
925
150
D
30
30
15
1
G
= 1 mA)
= 25 Ω, I
0.833
Max
50.0
AR
Unit
mJ
mJ
°C/W
°C/W
°C
°C
W
Unit
V
V
V
A
A
= 30 A
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
2-16C1B
SC-65
2009-09-29
2SK3176
Unit: mm

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2SK3176(F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

I – Common source 25°C Pulse test 3 0.4 0.8 1.2 1.6 Drain-source voltage V ( – ...

Page 4

R – (ON) 0.10 Common source Pulse test 0.08 0.06 0.04 0.02 0 −80 − Case temperature Tc (°C) Capacitance – 10000 3000 ...

Page 5

Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.05 0.02 0.03 Single pulse 0.01 0.01 0.005 0.003 10 μ 100 μ Safe Operating Area 300 I D max (pulse)* 100 100 μ ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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